近期部分论文与专利：
论文：
1、Wangyong Chen;Linlin Cai;Yongfeng Cao;Ming Tian;Xing Zhang;Xiaoyan Liu;Gang Du, Thermal Crosstalk Characterization Using Temperature Dependent Leakage Current Through Gate Stacks, in IEEE Electron Device Letters, vol. 42, no. 6, pp. 792-795, June 2021, doi: 10.1109/LED.2021.3075695.
2、S. Zhao, L. Cai, W. Chen, X. Liu and G. Du, Investigation of Self-heating and Thermal Network for Complementary FET, 2021 Silicon Nanoelectronics Workshop (SNW), 2021, pp. 1-2, doi: 10.1109/SNW51795.2021.00026.
3、Liu, Liqiao; Yu, Guihai; Du, Gang; Liu, Xiaoyan, A centripetal collection image sensor (CCIS) based on back gate modulation achieving 1T submicron pixel, Sci China Inf Sci, 2022, 65: 149401 doi: 10.1007/s11432-020-2933-y
4、Wangyong Chen; Linlin Cai; Xiaoyan Liu; Gang Du. Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs. IEEE Transactions on Electron Devices. Volume: 67, Issue: 11, 2020.
5、Liqiao Liu; Wangyong Chen; Xiaoyan Liu; Gang Du. Photoelectric Characteristic Evaluation of Different Structured UTBB MOSFETs. IEEE Transactions on Electron Devices. Volume: 67, Issue: 5, 2020.
6、Wangyong Chen; Linlin Cai; Yongfeng Cao; Duanquan Liao; Ming Tian; Xing Zhang; Xiaoyan Liu; Gang Du. New Measurement Method for Self-Heating in Silicon-on-Insulator MOSFETs Based on Shared Series Resistance. IEEE Electron Device Letters, Volume: 41, Issue: 2, 2020
7、Liqiao. Liu, Xiaoyan. Liu and Gang. Du, "UTBB Based Single Transistor Image Sensor of Submicron Pixel Using Back Gate Modulation," IEEE Journal of the Electron Devices Society, vol. 7, pp. 919-924, 2019.
8、Kunliang Wang, Gang Du, Zhiyuan Lun, Xiaoyan Liu, “Modeling of program Vth distribution for 3-D TLC NAND flash memory,” Science China Information Sciences, vol. 62, no. 4, Feb. 2019.
9、Wangyong Chen, Linlin Cai, Yun Li, Kunliang Wang, Xing Zhang, Xiaoyan Liu, and Gang Du, “Investigation of PBTI Degradation in Nanosheet nFETs with HfO2 Gate Dielectric by 3D-KMC Method,” IEEE Trans. Nanotechnology, vol. 18, pp. 385-391, April 2019.
10、Wangyong Chen, Linlin Cai, Yun Li, Kunliang Wang, Xing Zhang, Xiaoyan Liu, and Gang Du, “Investigation of Degradation under Arbitrary Bias Conditions in HfO2 based nanosheet nFETs by 3D kinetic Monte-Carlo Method,” Japanese Journal of Applied Physics, vo. 58, pp. SBBA13, March 2019.
11、Wangyong Chen, Linlin Cai, Kunliang Wang, Xing Zhang, Xiaoyan Liu, Gang Du, “Statistical Simulation of Self-heating induced Variability and Reliability with Application to Nanosheet-FETs based SRAM,” Microelectronics Reliability, vol. 98, pp. 63-68, April 2019.
12、Liu, Liqiao, Xiaoyan Liu, and Gang Du. "Evaluation of Photosensitive Performance of Different Structured UTBB MOSFET." 2019 Silicon Nanoelectronics Workshop (SNW). Kyoto, Japan on June 9-10 2019.
13、Kunliang Wang, Gang Du, Zhiyuan Lun, Xiaoyan Liu, “The Method of Predicting Retention Threshold Voltage Distribution for NAND Flash Memory Based on Back-Propagation Neural Network,” International Memory Workshop, Monterey, CA, USA, June 2019.
14、Wangyong Chen, Linlin Cai, Yongfeng Cao, Duanquan Liao, Ming Tian, Xing Zhang, Xiaoyan Liu, and Gang Du, “Experiment Characterization of Front and Back Interfaces Impact on Back Gate Modulation in UTBB-FDSOI MOSFETs,” in IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, July 2019.
14、Wangyong Chen, Linlin Cai, Xiaoyan Liu, and Gang Du, “Trap Dynamics based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs,” in International Conference on Simulation of Semiconductor Processes and Devices, September 2019.
18、Wangyong Chen, Linlin Cai, Gang Du and Xiaoyan Liu. “Efficient Variability- and Reliability-aware Device-Circuit Co-Design: From Trap Behaviors to Circuit Performance” 2019 IEEE International Electron Devices Meeting, December 2019
专利：
1、一种基于共享串联电阻的自热效应测试方法和电路 ZL201911349883.6 授权日 2021-02-05
2、自热效应测试结构及方法 ZL201910508070.0 授权日2021-05-04
3、一种阈值电压分布预测方法及装置 ZL201811593345.7 授权日2021-05-04
4、一种适应亚微米像素的UTBB光电探测器、阵列和方法ZL201910785417.6 授权日2021-11-02
5、一种自热效应测试结构及方法 ZL201910294891.9 授权日 2020.5.29
6、一种适应亚微米像素的UTBB光电探测元件及装置 ZL201810102547.0 授权日 2020.10.27
